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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Schröter, Michael |
dc.contributor.author | López González, Juan Miguel |
dc.date | 2009-11 |
dc.identifier.citation | Schröter, M.; Lopez, J. Study of emitter width effects on BF, fT and fmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation. "Semiconductor science and technology", Novembre 2009, vol. 24, núm. 11, p. 1-8. |
dc.identifier.citation | 0268-1242 |
dc.identifier.citation | 10.1088/0268-1242/24/11/115005 |
dc.identifier.uri | http://hdl.handle.net/2117/9902 |
dc.language.iso | eng |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject | Electronica |
dc.subject | Hydrodynamic receptors |
dc.subject | Heterojunctions |
dc.subject | Bipolar transistors |
dc.subject | Electrònica |
dc.title | Study of emitter width effects on BF, fT and fmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract |