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Capacitive and resistive RF-MEMS switches 2.5D & 3D Electromagnetic and Circuit modelling
Giacomozzi, Flavio; Colpo, S.; Plana, Robert; Llamas Morote, Marco Antonio; Girbau Sala, David; Pausas, Esther; Pradell i Cara, Lluís; Aouba, Stephane; Villneuve, C.; Puyal, Vincent; Pons, Patrick
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
this paper proposes different strategies for the electrical modelling of capacitive and resistive RF-MEMS switches which take into account the dependence of the electrical performance on the mechanical properties and technological processes. The EM modelling of MEMS switches is addressed with 2.5D and 3D full wave EM softwares. More specifically, ADS-MomentumTM (2.5D) and EMDSTM (3D) from Agilent Technologies are used. Capacitive RF-MEMS switches were fabricated with the LAAS-CNRS 6-mask RF-MEMS process in Toulouse, France, and resistive RF-MEMS switches were fabricated with the FBK-irst 8-mask RF-MEMS process in Trento, Italy. It is shown that, by applying the proposed strategies, 2.5D and 3D simulations are in good agreement with characterization results.
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació
Signal theory (Telecommunication)
RF MEMS (Radio frequency microelectromechanical systems)
Microwaves
Senyal, Teoria del (Telecomunicació)
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