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Title:
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Impact of NBTI on EMC behaviours of CMOS inverter
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Author:
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Fernández García, Raúl; Berbel Artal, Néstor; Gil Galí, Ignacio; Morata Cariñena, Marta
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group; Universitat Politècnica de Catalunya. SEPIC - Sistemes Electrònics de Potència i de Control |
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Abstract:
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In this paper the Electromagnetic Robustness (EMR) of a CMOS inverter has been analyzed when the pFETs are submitted to negative bias temperature instability (NBTI). The impact of pFET and CMOS inverter has been experimentally quantified and the switching noise and electromagnetic susceptibility has been analyzed by means of simulation. The results show that NBTI reduces the switching noise whereas the EMI susceptibility is not modified. |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica
-Metal oxide semiconductors, Complementary
-Electromagnetic interference
-Interferència electromàgnetica |
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Rights:
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Document type:
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Article - Published version
Conference Object |
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