Model predicts large-signal modfet performance

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Title:	Model predicts large-signal modfet performance
Author:	O'Callaghan Castellà, Juan Manuel; Beyer, J. B.
Other authors:	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
Abstract:	Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwave applications. Unfortunately, there are few large-signal models available for MODFETs, and determining the parameters of these models at high power levels is often difficult. A good large-signal model can be obtained from small-signal measurements that require relatively common microwave instrumentation. The authors explain how small-signal measurements of various bias points yield a useful nonlinear equivalent circuit.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques -Modulation-doped field-effect transistors -equivalent circuits -high electron mobility transistors -semiconductor device models -solid-state microwave devices -HEMT -MODFET performance -microwave applications -large-signal models -small-signal measurements -nonlinear equivalent circuit -Microwave devices
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Document type:	Article
Published by:	PENTON MEDIA, INC
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