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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Marsal Garví, Lluís F. |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Pallarés Marzal, Josep |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2003-03-24 |
dc.identifier.citation | Marsal, L.F.; Martín, I.; Pallarés, J.; Orpella, A.; Alcubilla, R. Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes. A: Journal of Applied Physics, 2003, v.94, p.2622-2626. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.1591073 |
dc.identifier.uri | http://hdl.handle.net/2117/2441 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | TIC2002-04182-C02 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject | Silicon compounds |
dc.subject | Hydrogenation. |
dc.subject | Amorphous semiconductors. |
dc.subject | Amorphous silicon-carbon |
dc.subject | Amorphous semiconductors |
dc.subject | Annealing effects |
dc.subject | Carrier transport mechanism |
dc.subject | Conduction mechanisms |
dc.subject | Dark conductivity |
dc.subject | Dark current-voltage characteristics |
dc.subject | Electrical transport properties |
dc.subject | Elemental semiconductors |
dc.subject | Forward current |
dc.subject | Multitunneling capture emission |
dc.subject | p-n heterojunctions |
dc.subject | Recombination currents |
dc.subject | Semiconductor device measurement |
dc.subject | Semiconductor diodes |
dc.subject | Silicon compounds |
dc.subject | Space-charge-limited conduction |
dc.subject | Space charge limited current |
dc.subject | Temperature effects |
dc.subject | Wide band gap semiconductors |
dc.subject | Silici |
dc.subject | Hidrogen |
dc.subject | Semiconductors amorfs |
dc.title | Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract | |
dc.description.abstract |