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Effect of amorphous silicon carbide layer thickness on passivation quantity of crystalline silicon surface
Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the determination of the fixed charge density, Qf, within the a-SiCx(n):H film and the fundamental recombination of holes, Sp0. The main result is that surface recombination velocity decreases with film thickness up to 40 nm and then saturates. The evolution of the interface parameters indicates that Qf could be located in a layer less than 10 nm thick. In addition, Sp0 increases with thinner films probably due to different hydrogenation and saturation of interface dangling bonds during forming gas annealing.
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
Silicon.
Microelectronics.
Amorphous film
Amorphous semiconductors
Crystalline surface
Elemental semiconductors
Fixed charge density
Forming gas annealing
Fundamental hole recombination
Passivation
Hydrogenated film
Interface dangling bond
Layer thickness
p-type Crystalline wafer
Saturation
Semiconductor thin films
Silicon compounds
Surface passivation
Wide band gap semiconductors
Microelectrònica
Silici
Article
American Institute of Physics
         

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