To access the full text documents, please follow this link:

Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the determination of the fixed charge density, Qf, within the a-SiCx(n):H film and the fundamental recombination of holes, Sp0. The main result is that surface recombination velocity decreases with film thickness up to 40 nm and then saturates. The evolution of the interface parameters indicates that Qf could be located in a layer less than 10 nm thick. In addition, Sp0 increases with thinner films probably due to different hydrogenation and saturation of interface dangling bonds during forming gas annealing.
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
Amorphous film
Amorphous semiconductors
Crystalline surface
Elemental semiconductors
Fixed charge density
Forming gas annealing
Fundamental hole recombination
Hydrogenated film
Interface dangling bond
Layer thickness
p-type Crystalline wafer
Semiconductor thin films
Silicon compounds
Surface passivation
Wide band gap semiconductors
American Institute of Physics

Show full item record

Related documents

Other documents of the same author

Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón
Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere
Garin Escriva, Moises; Martín García, Isidro; Bermejo Broto, Sandra; Alcubilla González, Ramón
Garin Escriva, Moises; Hernández García, David; Todorov Trifonov, Trifon; Cardador Maza, David; Alcubilla González, Ramón
Hernández Díaz, David; Lange, Diego; Todorov Trifonov, Trifon; Garin Escriva, Moises; García Molina, Francisco Miguel; Rodríguez Martínez, Ángel; Alcubilla González, Ramón