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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Ferré Tomas, Rafel |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Vetter, Michael |
dc.contributor.author | Torres, I. |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2006-06-08 |
dc.identifier.citation | Ferré, T.; Martín, I.; Ortega, P.; Vetter, M.; Torres, I.; Alcubilla, R. n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers. Journal of Applied Physics, 2006, vol. 100, 073703. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.2354323 |
dc.identifier.uri | http://hdl.handle.net/2117/2457 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | TIC2002-04184-C02-01 |
dc.relation | TEC2005-02716/MIC |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject | Silicon carbide. |
dc.subject | Solar cells |
dc.subject | Amorphous materials |
dc.subject | Antireflective amorphous silicon carbide layers |
dc.subject | Current density |
dc.subject | Deposition |
dc.subject | Optical losses |
dc.subject | Surface passivation |
dc.subject | Photoconductivity |
dc.subject | Photocurrents |
dc.subject | Photovoltaic conversion efficiency |
dc.subject | Plasma enhanced chemical vapor deposition |
dc.subject | Planar diffusion |
dc.subject | Silicon carbide |
dc.subject | Solar cells |
dc.subject | Surface recombination velocity |
dc.subject | Carbur de silici |
dc.subject | Cèl·lules solars |
dc.title | n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers |
dc.type | info:eu-repo/semantics/article |
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