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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Garin Escriva, Moises |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Bermejo Broto, Sandra |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2006-06-09 |
dc.identifier.citation | Garín, M.; Mrtín, I.; Bermejo, S.; Alcubilla, R. Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements. A: Journal of Applied Phyics, 2007, vol. 101, 123716. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.2748355 |
dc.identifier.uri | http://hdl.handle.net/2117/2445 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | CICYT-TEC2005-02716/MIC |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject | Dielectrics. |
dc.subject | Silicon. |
dc.subject | Charge density |
dc.subject | Crystalline materials |
dc.subject | Dielectric materials |
dc.subject | Electric space charge |
dc.subject | Lifetime measurements |
dc.subject | Photoconductivity |
dc.subject | Photoconductance techniques |
dc.subject | Quasisteady-state |
dc.subject | Silicon wafers |
dc.subject | DRM |
dc.subject | Dielèctrics |
dc.subject | Silici |
dc.title | Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract | |
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