Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Cheylan, Stephanie
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Bolink, Henk J.
dc.contributor.author	Coronado Miralles, Eugenio
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Alcubilla González, Ramón
dc.contributor.author	Badenes Guia, Gonçal
dc.date	2007-12-07
dc.identifier.citation	Cheylan, S.; Puigdollers, J.; Bolink, H.J.; Coronado, E.; Voz, C.; Alcubilla, R.; Badenes, G. Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet. A: Journal of Applied Physics, 2005, vol. 103, 096110.
dc.identifier.citation	0021-8979
dc.identifier.citation	10.1063/1.2917304
dc.identifier.uri	http://hdl.handle.net/2117/2456
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	TEC2006-10665/MIC
dc.relation	Consolider Ingenio CSD2007-00007
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject	Electric conductivity.
dc.subject	Nanostructured materials.
dc.subject	Organic compounds.
dc.subject	Oxidation.
dc.subject	Doping
dc.subject	Electrical conductivity
dc.subject	Electronic density of states
dc.subject	Hole mobility
dc.subject	Hole transport layer
dc.subject	Molecular magnetic cluster
dc.subject	Molecular nanomagnet
dc.subject	Nanostructured materials
dc.subject	Organic compounds
dc.subject	Oxidation
dc.subject	Spin coating
dc.subject	Thin film transistors
dc.subject	Dipolar broadening
dc.subject	Conductivitat elèctrica
dc.subject	Materials nanoestructurats
dc.subject	Oxidació
dc.subject	Compostos orgànics
dc.title	Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet
dc.type	info:eu-repo/semantics/article
dc.description.abstract	Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling.
dc.description.abstract	Peer Reviewed

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