Comparison of air gap breakdown and substrate injection as mechanisms to induce dielectric charching in microelectromechanical switches

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/2442

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Molinero Giles, David
dc.contributor.author	Castañer Muñoz, Luis María
dc.date	2007-07-12
dc.identifier.citation	Molinero, D.; Castañer, L. Comparison of air gap breakdown and substrate injection as mechanisms to induce dielectric charching in microelectromechanical switches. A: Applied Physics Letters, 2008, vol. 92, 043502.
dc.identifier.citation	0003-6951
dc.identifier.citation	10.1663/1.2837615
dc.identifier.uri	http://hdl.handle.net/2117/2442
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject	Microelectromechanical systems.
dc.subject	Breakdown (Electricity)
dc.subject	Air gap breakdown
dc.subject	Dielectric charging
dc.subject	Dielectric layer
dc.subject	Dielectric thin films
dc.subject	Electric breakdown
dc.subject	Electrical stress
dc.subject	Microelectromechanical switches
dc.subject	Reliability
dc.subject	Substrate carrier conduction
dc.subject	Substrate injection
dc.subject	MEMS
dc.subject	Sistemes microelectromecànics
dc.title	Comparison of air gap breakdown and substrate injection as mechanisms to induce dielectric charching in microelectromechanical switches
dc.type	info:eu-repo/semantics/article
dc.description.abstract	Experiments show that air breakdown and substrate carrier conduction can be responsible of the dielectric charging of microelectromechanical devices after electrical stress. Test conducted under vacuum allows us to isolate the two mechanisms. It is also shown that the relative importance of the two mechanisms depends on the dielectric nature and technology.
dc.description.abstract	Peer Reviewed

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