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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat |
dc.contributor.author | Vatajelu, Elena Ioana |
dc.contributor.author | Gómez Pau, Álvaro |
dc.contributor.author | Renovell, Michel |
dc.contributor.author | Figueras Pàmies, Joan |
dc.date | 2011 |
dc.identifier.citation | Vatajelu, E. [et al.]. Transient noise failures in SRAM cells : dynamic noise margin metric. A: Asian Test Symposium. "Proceedings of the twentieth Asian test symposium: ATS 2011". New Delhi: IEEE Computer Society Publications, 2011, p. 413-418. |
dc.identifier.citation | 978-0-7695-4583-7 |
dc.identifier.citation | 10.1109/ATS.2011.64 |
dc.identifier.uri | http://hdl.handle.net/2117/15781 |
dc.language.iso | eng |
dc.publisher | IEEE Computer Society Publications |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Informàtica::Hardware |
dc.subject | Random access memory -- Reliability |
dc.subject | SRAM chips |
dc.title | Transient noise failures in SRAM cells: dynamic noise margin metric |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/conferenceObject |
dc.description.abstract | |
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