Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

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Title:	Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor
Author:	Moreno Sierra, César; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers i González, Joaquim; Bromley, Stephan; Rovira, Concepció; Alcubilla González, Ramón; Veciana, Jaume
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Electrònica molecular -Molecular electronics -Electronic apparatus and appliances -Electrònica molecular -Electrònica -- Materials
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Document type:	Article - Published version Article
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