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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Temple Boyer, Pierre |
dc.contributor.author | Jalabert, L. |
dc.contributor.author | Masarotto, L. |
dc.contributor.author | Alay, Josep Lluís |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.date | 2012-05-08T07:56:14Z |
dc.date | 2012-05-08T07:56:14Z |
dc.date | 2000-09 |
dc.date | 2012-05-04T10:12:56Z |
dc.identifier.citation | 0734-2101 |
dc.identifier.citation | 523222 |
dc.identifier.uri | http://hdl.handle.net/2445/25055 |
dc.format | 5 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1116/1.1286714 |
dc.relation | Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 2000, vol. 18, p. 2389-2393 |
dc.relation | http://dx.doi.org/10.1116/1.1286714 |
dc.rights | (c) American Institute of Physics, 2000 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Pel·lícules fines |
dc.subject | Electroquímica |
dc.subject | Nitrurs |
dc.subject | Microelectrònica |
dc.subject | Thin films |
dc.subject | Electrochemistry |
dc.subject | Nitrides |
dc.subject | Microelectronics |
dc.title | Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |