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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Peiró Martínez, Francisca |
dc.contributor.author | Cornet i Calveras, Albert |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.contributor.author | Beck, M. |
dc.contributor.author | Py, M. A. |
dc.date | 2012-05-08T08:54:53Z |
dc.date | 2012-05-08T08:54:53Z |
dc.date | 1998-06-15 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 129017 |
dc.identifier.uri | http://hdl.handle.net/2445/25083 |
dc.format | 5 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.367517 |
dc.relation | Journal of Applied Physics, 1998, vol. 83, núm. 12, p. 7537-7541 |
dc.relation | http://dx.doi.org/10.1063/1.367517 |
dc.rights | (c) American Institute of Physics, 1998 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Microelectrònica |
dc.subject | Superfícies (Física) |
dc.subject | Microelectronics |
dc.subject | Surfaces (Physics) |
dc.title | Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: strain induced or due to alloy decomposition |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |