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Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis
Izquierdo Roca, Victor; Pérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Álvarez García, Jacobo; Calvo Barrio, Lorenzo; Bermudez, V.; Grand, P. P.; Ramdani, O.; Parissi, L.; Kerrec, O.
Universitat de Barcelona
This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn(S,Se)2 absorbers produced by electrodeposition of nanocrystalline CuInSe2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.
03-05-2012
Ciència dels materials
Propietats òptiques
Materials science
Optical properties
(c) American Institute of Physics, 2007
Artículo
American Institute of Physics
         

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