Title:
|
Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
|
Author:
|
Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
|
Other authors:
|
Universitat de Barcelona |
Abstract:
|
A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics. |
Subject(s):
|
-Microscòpia electrònica -Pel·lícules fines -Electron microscopy -Thin films |
Rights:
|
(c) American Institute of Physics, 1997
|
Document type:
|
Article Article - Published version |
Published by:
|
American Institute of Physics
|
Share:
|
|