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Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
Universitat de Barcelona
A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.
2012-05-03
Microscòpia electrònica
Pel·lícules fines
Electron microscopy
Thin films
(c) American Institute of Physics, 1997
Article
American Institute of Physics
         

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