Para acceder a los documentos con el texto completo, por favor, siga el siguiente enlace: http://hdl.handle.net/2445/24816
dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Leveque, P. |
dc.contributor.author | Kortegaard Nielsen, H. |
dc.contributor.author | Pellegrino, Paolo |
dc.contributor.author | Hallen, A. |
dc.contributor.author | Svensson, Bengt G. |
dc.contributor.author | Kuznetsov, Andrej |
dc.contributor.author | Wong-Leung, J. |
dc.contributor.author | Jagadish, C. (Chennupati) |
dc.contributor.author | Privitera, V. |
dc.date | 2012-05-03T09:38:38Z |
dc.date | 2012-05-03T09:38:38Z |
dc.date | 2003-01-15 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 521838 |
dc.identifier.uri | http://hdl.handle.net/2445/24816 |
dc.format | 7 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1528304 |
dc.relation | Journal of Applied Physics, 2003, vol. 93, núm. 2, p. 871-877 |
dc.relation | http://dx.doi.org/10.1063/1.1528304 |
dc.rights | (c) American Institute of Physics, 2003 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Cristal·lografia |
dc.subject | Estructura electrònica |
dc.subject | Crystallography |
dc.subject | Electronic structure |
dc.title | Vacancy and interstitial depth profiles in ion-implanted silicon |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |