Electrically active point defects in n-type 4H¿SiC

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Title:	Electrically active point defects in n-type 4H¿SiC
Author:	Doyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, B. G.; Schoner, A.; Nordell, N.; Lindstrom, J. L.
Other authors:	Universitat de Barcelona
Abstract:	An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..
Subject(s):	-Estructura electrònica -Cristal·lografia -Electronic structure -Crystallography
Rights:	(c) American Institute of Physics, 1998
Document type:	Article Article - Published version
Published by:	American Institute of Physics
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