Título:
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Electrically active point defects in n-type 4H¿SiC
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Autor/a:
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Doyle, J. P.; Linnarsson, M. K.; Pellegrino, Paolo; Keskitalo, N.; Svensson, B. G.; Schoner, A.; Nordell, N.; Lindstrom, J. L.
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Otros autores:
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Universitat de Barcelona |
Abstract:
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An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers .. |
Materia(s):
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-Estructura electrònica -Cristal·lografia -Electronic structure -Crystallography |
Derechos:
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(c) American Institute of Physics, 1998
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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Compartir:
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