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dc.contributor | Universitat de Barcelona |
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dc.contributor.author | Georgakilas, Alexander |
dc.contributor.author | Christou, Aris |
dc.contributor.author | Zekentes, Konstantinos |
dc.contributor.author | Mercy, J. M. |
dc.contributor.author | Konczewic, L. K. |
dc.contributor.author | Vilà i Arbonès, Anna Maria |
dc.contributor.author | Cornet i Calveras, Albert |
dc.date | 2012-05-02T06:59:05Z |
dc.date | 2012-05-02T06:59:05Z |
dc.date | 1994-07-01 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 91318 |
dc.identifier.uri | http://hdl.handle.net/2445/24723 |
dc.format | 3 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.357652 |
dc.relation | Journal of Applied Physics, 1994, vol. 76, num. 3, p. 1948-1950 |
dc.relation | http://dx.doi.org/10.1063/1.357652 |
dc.rights | (c) American Institute of Physics, 1994 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Camps magnètics |
dc.subject | Nanotecnologia |
dc.subject | Magnetic fields |
dc.subject | Nanotechnology |
dc.title | Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |