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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Westwood, David I. |
dc.contributor.author | Woolf, D. A. |
dc.contributor.author | Vilà i Arbonès, Anna Maria |
dc.contributor.author | Cornet i Calveras, Albert |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.date | 2012-05-02T06:53:54Z |
dc.date | 2012-05-02T06:53:54Z |
dc.date | 1993-07-01 |
dc.date | 2012-04-20T11:52:48Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 87816 |
dc.identifier.uri | http://hdl.handle.net/2445/24722 |
dc.format | 5 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.354827 |
dc.relation | Journal of Applied Physics, 1993, vol. 74, núm. 3, p. 1731-1735 |
dc.relation | http://dx.doi.org/10.1063/1.354827 |
dc.rights | (c) American Institute of Physics, 1993 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Cristal·lografia |
dc.subject | Nanotecnologia |
dc.subject | Crystallography |
dc.subject | Nanotechnology |
dc.title | Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |