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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Peiró Martínez, Francisca |
dc.contributor.author | Cornet i Calveras, Albert |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.date | 2012-05-02T11:00:23Z |
dc.date | 2012-05-02T11:00:23Z |
dc.date | 1995-05-15 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 93635 |
dc.identifier.uri | http://hdl.handle.net/2445/24742 |
dc.format | 4 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.359308 |
dc.relation | Journal of Applied Physics, 1995, vol. 77, núm. 10, p. 4993-4996 |
dc.relation | http://dx.doi.org/10.1063/1.359308 |
dc.rights | (c) American Institute of Physics, 1995 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Microscòpia electrònica |
dc.subject | Semiconductors |
dc.subject | Electron microscopy |
dc.subject | Semiconductors |
dc.title | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |