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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Dueñas Carazo, Salvador |
dc.contributor.author | Castán Lanaspa, María Elena |
dc.contributor.author | Dios, Agustín de |
dc.contributor.author | Bailón Vega, Luis A. |
dc.contributor.author | Barbolla Sancho, Juan |
dc.contributor.author | Pérez Rodríguez, Alejandro |
dc.date | 2012-04-30T08:16:00Z |
dc.date | 2012-04-30T08:16:00Z |
dc.date | 1990-05-15 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 80029 |
dc.identifier.uri | http://hdl.handle.net/2445/24682 |
dc.format | 6 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.345149 |
dc.relation | Journal of Applied Physics, 1990, vol. 67, núm. 10, p. 6309-6314 |
dc.relation | http://dx.doi.org/10.1063/1.345149 |
dc.rights | (c) American Institute of Physics, 1990 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Espectroscòpia |
dc.subject | Òptica |
dc.subject | Optics |
dc.subject | Spectrum analysis |
dc.title | Characterization of the EL2 center in GaAs by optical admittance spectroscopy |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |