Título:
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Ni-Mn-Ga thin films produced by pulsed laser deposition
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Autor/a:
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Tello, P. G.; Castaño, F. J.; O'Handley, Robert C., 1942-; Allen, Samuel M.; Esteve, M.; Labarta, Amílcar; Batlle Gelabert, Xavier
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films |
Materia(s):
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-Pel·lícules fines -Cristal·lografia -Ciència dels materials -Làsers -Microelectrònica -Crystallography -Materials science -Lasers -Microelectronics |
Derechos:
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Thin films
(c) American Institute of Physics, 2002
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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