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Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
Roura Grabulosa, Pere; Farjas Silva, Jordi; Roca i Cabarrocas, Pere
Cristal·lització
Espectroscòpia Raman
Moviment ondulatori, Teoria del
Reaccions d'anihilació
Semiconductors amorfs
Silici
Amorphous semiconductors
Annihilation reactions
Crystallization
Raman spectroscopy
Silicon
Tots els drets reservats
Article
American Institute of Physics
         

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