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dc.contributor.author | Farjas Silva, Jordi |
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dc.contributor.author | Roura Grabulosa, Pere |
dc.date | 2007 |
dc.date.accessioned | 2011-02-15T16:23:40Z |
dc.date.available | 2011-02-15T16:23:40Z |
dc.date.issued | 2011-02-15T16:23:40Z |
dc.identifier.citation | Farjas Silva, J., i Roura i Grabulosa, P. (2007). Oxidation of silicon: further tests for the interfacial silicon emission model. Journal of Applied Physics, 102 (5), 054902. Recuperat 22 març 2011, a http://jap.aip.org/resource/1/japiau/v102/i5/p054902_s1 |
dc.identifier.citation | 1089-7550 (versió electrònica) |
dc.identifier.citation | 0021-8979 (versió paper) |
dc.identifier.uri | http://hdl.handle.net/10256/3213 |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | http://dx.doi.org/10.1063/1.2773693 |
dc.relation | © Journal of Applied Physics, 2007, vol. 102 |
dc.relation | Articles publicats (D-F) |
dc.rights | Tots els drets reservats |
dc.subject | Semiconductors |
dc.subject | Silici -- Oxidació |
dc.subject | Silicon -- Oxidation |
dc.title | Oxidation of silicon: further tests for the interfacial silicon emission model |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract |