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Electrical properties of individual tin oxide nanowires contacted to platinum electrodes
Hernández Ramírez, Francisco; Tarancón Rubio, Albert; Casals Guillén, Olga; Pellicer, Eva; Rodríguez, J.; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Barth, S.; Mathur, S.
Universitat de Barcelona
A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE= 0.4 eV.
-Superconductivitat
-Espintrònica
-Superconductivity
-Electronic structure and electrical properties of surfaces
(c) The American Physical Society, 2007
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Hernández Ramírez, Francisco; Tarancón Rubio, Albert; Casals Guillén, Olga; Pellicer, Eva; Rodríguez, J.; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Barth, S.; Mathur, S.
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