Título:
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Hydrogen-induced piezoelectric effects in InP HEMT's
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Autor/a:
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Blanchard, Roxann R.; Alamo, Jesús A. del; Adams, Stephen B.; Chao, P. C.; Cornet i Calveras, Albert
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Otros autores:
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Universitat de Barcelona |
Abstract:
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In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H/sub 2/ exposure. |
Materia(s):
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-Piroelectricitat i piezoelectricitat -Hidrogenació -Hydrogenation -Piezoelectricity -Semiconductor device -InP HEMT's |
Derechos:
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(c) IEEE, 1999
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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IEEE
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Compartir:
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