Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells

All of RECERCAT

To access the full text documents, please follow this link: http://hdl.handle.net/2117/107030

Title:	Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
Author:	Martinez, Javier; Rodriguez, Rosa; Nafria, Montse; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Integrated circuits -Random Telegraph Noise -SRAM -variability -characterization -modeling -Circuits integrats
Rights:
Document type:	Article - Published version Conference Object
Published by:	Institute of Electrical and Electronics Engineers (IEEE)
Share: