Título:
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FET noise-parameter determination using a novel technique based on 50 noise measurements
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Autor/a:
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Lázaro Guillén, Antoni; Pradell i Cara, Lluís; O'Callaghan Castellà, Juan Manuel
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Otros autores:
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Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
Abstract:
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A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain–current and gate–length is obtained. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica -Hearing -Acoustic reflection -Calibration -Oïda |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
Editor:
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IEEE Microwave Theory and Techniques Society
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