Título:
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Tunnel FET device characteristics for RF energy harvesting passive rectifiers
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Autor/a:
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Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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The lack of high power conversion efficiency in RF passive rectifier circuits at sub-µW power levels with current
MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage
values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage
values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF
energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows
the impact of device properties in rectifier circuit efficiency. |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica -Electric engineering -Enginyeria electrònica -- Aparells i accessoris -Metall-òxid-semiconductors -Transistors |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
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