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Título:
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Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation
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Autor/a:
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Rana, Manish; Canal Corretger, Ramon; Amat Bertran, Esteve; Rubio Sola, Jose Antonio
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors; Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. ARCO - Microarquitectura i Compiladors; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
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Abstract:
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Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines minimum-energy operation of 2T and 3T1D e-DRAM gain cells as an alternative to SRAM at 32nm technology node with different design points: up-sizing transistors, using high-Vth transistors, read/write wordline assists and temperature. First, the e-DRAM cells are evaluated without considering any process variations. The design-space is explored by creating a kriging meta-model to reduce the number of simulations. Finally, a full-factorial statistical analysis of e-DRAM cells is performed in presence of threshold voltage variations. The effect on mean MEP is also reported. |
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Abstract:
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Peer Reviewed |
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Materia(s):
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-Àrees temàtiques de la UPC::Informàtica::Arquitectura de computadors
-Wearable technology -- Energy consumption
-DRAM chips
-Energy conservation
-SRAM chips
-Statistical analysis
-2T1D e-DRAM
-3T1D e-DRAM
-Biomedical wearable device
-Embedded-battery
-Energy-efficiency
-Minimum-energy point
-MEP
-Subthreshold voltages
-SRAM memory
-Noise margins
-Minimum energy operation
-Kriging metamodel
-Threshold voltage variation
-Size 32 nm
-Ordinadors portables -- Consum d'energia |
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Derechos:
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Tipo de documento:
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Artículo - Versión presentada
Objeto de conferencia |
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Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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Compartir:
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