Resistive random access memories (RRAMs)have arisen as a competitive candidate for non-volatile memories due to their scalability, simple structure, fast switching speed and compatibility with conventional back-end processes. The stochastic switching mechanism and intrinsic variability of RRAMs will poses challenges that must be overcome prior to their massive memory commercialization. However, these very same features open a wide range of potential applications for these devices in hardware security. In this context, this work proposes the generation of a random bit by means of simultaneous write opeation of two paralled cells so that only one of them unpredictably switches its state. Electrical simulations confirm the strong stochastic behavior and stability of the proposed primitive. Exploiting this fact, a Physical Unclonable Function (PUF)like primitive is implemented based on modified 1 transistor - 1 resistor (1T1R) array structure.

Peer Reviewed