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Título:
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Optimization of parameters for CMOS MEMS resonant pressure sensors
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Autor/a:
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Banerji, Saoni; Madrenas Boadas, Jordi; Fernández Martínez, Daniel
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. CETpD -Centre d'Estudis Tecnològics per a l'Atenció a la Dependència i la Vida Autònoma |
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Abstract:
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Micro machined resonant pressure sensors have
rapidly grown into a major type of MEMS products over the past
two decades. This paper presents the mathematical modelling of
squeeze film damping in a MEMS resonant pressure sensor by
MATLAB wherein structural and performance parameters of
the device i.e. quality factor, capacitance and sensitivity are
optimized relative to pressure. The change in quality factor is
aimed to be optimized in order to enhance the modelling of the
sensor and improve the overall sensitivity of the complete
architecture. The sensor mass being 0.4 µg was designed with
optimum structural parameters of 140 µm x 140 µm x 8 µm
having 6 x 6 perforations along the row and column of the plate
respectively to yield an enhanced quality factor of 62 and reduced
damping coefficient of 4.2 µN-s/m at atmospheric pressure. |
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Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors
-CMOS MEMS Resonant pressure sensor
-squeezefilm
air damping
-perforated plate
-MATLAB
-Electrònica -- Aparells i instruments |
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Derechos:
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Tipo de documento:
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Artículo - Versión presentada
Objeto de conferencia |
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Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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Compartir:
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