Título:
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The valence band alignment at ultrathin SiO2/Si interfaces
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Autor/a:
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Alay, Josep Lluís; Hirose, M.
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Otros autores:
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Universitat de Barcelona |
Abstract:
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High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface. |
Materia(s):
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-Semiconductors -Interfícies (Ciències físiques) -Semiconductors -Interfaces (Physical sciences) |
Derechos:
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(c) American Institute of Physics , 1997
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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Compartir:
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