Título:
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The configurational energy gap between amorphous and crystalline silicon
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Autor/a:
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Kail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Roca i Cabarrocas, P. (Pere)
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Otros autores:
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Universitat de Barcelona |
Abstract:
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The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects. |
Materia(s):
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-Silici -Cristal·lització -Entalpia -Calorimetria -Silicon -Crystallization -Enthalpy -Calorimetry |
Derechos:
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(c) Wiley-VCH, 2011
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Tipo de documento:
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Artículo Artículo - Versión aceptada |
Editor:
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Wiley-VCH
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Compartir:
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