Three types of ZnO based thin films were deposited under different deposition parameters using DC magnetron reactive sputtering technique over glass and n-type (100) highly oriented silicon substrates: un-doped ZnO films, Vanadium doped Zinc Oxide films and Aluminium doped Zinc Oxide films. ZnO:V films were co-sputtered using two different magnetrons with Zinc (99,99%) and Vanadium (99,99%) targets, while pure ZnO and ZnO:Al films were sputtered using a single magnetron, placing an aluminium thin plate over the Zinc target in the case of ZnO:Al films. In all cases oxygen was used as the reactive gas and argon as the inert gas for creating the plasma. Previous to the deposition of the doped films, pure Zinc Oxide and pure Vanadium Oxide films were deposited separately to optimise some of their individual sputtering parameters and for following comparison. After characterization of all the films and result analysis, the most suitable and adjusted sputtering parameters were chosen to fabricate a piezoelectric thin film vibration energy harvesting device. Three different types of films were used for the device fabrication and testing, one un-doped ZnO and two Vanadium doped ZnO films, in order to compare their vibration response and energy harvesting capabilities. For device testing different experiments were carried on including: Ultrasonic vibrations, mobile phone vibrations, cantilever vibrations and knocking induced vibrations. The films showed good piezoelectric activity, generating voltages in the order of tens to hundreds of μV under the different vibration conditions.

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