This work exploits the mirage effect to analyze multiple heat sources thermally interacting in an integrated circuit (IC) by means of a probe IR laser beam, which strikes on the die lateral walls and passes through the die substrate. Under such conditions, the criteria for locating such hot spots, as well as their relative power dissipation, are discussed on the basis of a theoretical model inferred in this work. Finally, the technique feasibility is shown in a real application scenario, obtaining 5-mu m spatial lateral resolution and an error in power dissipation measurements below 5%. This method may become a practical alternative to usual off-chip techniques for inspecting hot spots in ICs and to experimentally characterize heat flow in the semiconductor substrate. (C) 2014 AIP Publishing LLC.

Peer Reviewed