This paper presents a novel class - F power amplifier for mobile applications in which with a proper harmonic tuning structure the need f or an extra fil tering section is eliminated . A class - F power a mplifier employing a GaN HEMT device has been designed, fabricated and measured at 900 MHz . The fabricated circuit achieves a n excel lent harmonic - suppression level and the t otal h armonic distortion is around 1.2% . It overcomes the narrow band performance of class - F power amplifier s, giving more than 70% efficiency over a 100 MHz bandwidth . Experimental results show that the amplifier is able to deliver 38.5 dBm output power while achieving the state - of - the - art PAE of 8 0.5 % with a peak drain eff iciency of 8 4 % , and a power gain of 13.6 dB for an input power of 25 dBm . A good agreement between measurement and simulation results is observed for the proposed structure.

Peer Reviewed