Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process

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Title:	Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process
Author:	Boronat Moreiro, Alfredo; Silvestre Bergés, Santiago; Orpella García, Alberto
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing process and the electrical response of the metal–semiconductor contact are characterized.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica -Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica -Temperature measurements -Photonics -GaAs -ohmic contact -laser firing -Termometria -Fotònica
Rights:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Document type:	Article - Published version Article
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