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Title:	Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).
Author:	Bowen, M.; Cros, V.; Petroff, F.; Fert, Albert, 1938-; Martínez Boubeta, José Carlos; Costa Krämer, José Luis; Anguita, José Virgilio; Cebollada, Alfonso; Briones Fernández-Pola, Fernando; Teresa, J. M. de; Morellon, L.; Ibarra, M. R.; Güell Vilà, Frank; Peiró Martínez, Francisca; Cornet i Calveras, Albert
Other authors:	Universitat de Barcelona
Abstract:	We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.
Subject(s):	-Magnetoresistència -Dispositius de memòria d'ordinador -Microelectrònica -Efecte túnel -Ferro -Magnetoresistance -Computer storage devices -Microelectronics -Tunneling (Physics) -Iron
Rights:	(c) American Institute of Physics , 2001
Document type:	Article Article - Published version
Published by:	American Institute of Physics
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