Títol:
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Highly textured Sr, Nb, co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf-sputtering
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Autor/a:
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Ostos, C.; Raymond, O.; Suarez-Almodovar, N.; Bueno-Baqués, D.; Mestres i Vila, Ma. Lourdes; Siqueiros, J. M.
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Altres autors:
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Universitat de Barcelona |
Abstract:
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In this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness. |
Matèries:
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-Pel·lícules fines -Ferroelectricitat -Metall-òxid-semiconductors complementaris -Espintrònica -Niobi -Thin films -Ferroelectricity -Complementary metal oxide semiconductors -Spintronics -Niobium |
Drets:
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(c) American Institute of Physics , 2011
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Tipus de document:
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Article Article - Versió publicada |
Publicat per:
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American Institute of Physics
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