Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout

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Título:	Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout
Autor/a:	Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, B.; Boyer, A.; BenDhia, S.
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group
Abstract:	In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wearout mechanism. Therefore, the impact of HCI on circuits can be analyzed by using the nth power law MOSFET model.
Abstract:	Peer Reviewed
Materia(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència -Metal oxide semiconductor field-effect transistors -Electromagnetism -Electromagnetisme
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Tipo de documento:	Artículo - Versión presentada Artículo
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Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, Binhong; BenDhia, S.; Boyer, A.

Li, Binhong; Berbel Artal, Néstor; Boyer, A.; BenDhia, S.; Fernández García, Raúl

Fernández García, Raúl; Gil Galí, Ignacio; Boyer, A.; BenDhia, S.; Vrignon, Bertrand

Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio

Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio

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