An alternative characterization method of PFET sub-threshold slope under NBTI stress

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Title:	An alternative characterization method of PFET sub-threshold slope under NBTI stress
Author:	Fernández García, Raúl; Gil Galí, Ignacio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group
Abstract:	The effects of negative bias temperature instability (NBTI) on the sub-threshold performance of a pFET have been investigated by means of experimental methods. Specifically, the sub-threshold slope under static and dynamic NBTI stress has been characterized for different NBTI stress conditions. In order to perform the characterization, a proposal based on an alternative measurement technique to obtain the sub-threshold slope is presented. Our first results indicate that similar sub-threshold slope is obtained in all stress conditions.
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència -Electromagnetic interference -Switching power supplies -Interferència electromàgnetica -Fonts d'alimentació
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Document type:	Article - Published version Conference Object
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