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Título:
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Localization and electrical characterization of interconnect open defects
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Autor/a:
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Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Beverloo, Willem; Vries, Dirk K. de; Eichenberger, Stefan; Volf, Paul A. J.
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. Departament de Disseny i Programació de Sistemes Electrònics; Universitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat |
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Abstract:
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A technique for extracting the electrical and topological
parameters of open defects in process monitor lines is
presented. The procedure is based on frequency-domain measurements
performed at both end points of the line. The location
as well as the resistive value of the open defect are derived from
attenuation and phase shift measurements. The characteristic
defect-free impedance of the line and its propagation constant
are considered to be unknowns, and their values are also derived
from the above measurements. In this way, the impact of process
parameter variations on the proposed model is diminished. The
experimental setup required to perform the characterization
measurements and a simple graphical procedure to determine the
defect and line parameters are presented. Experimental results
show a good agreement between the predicted location of the open
and its real location, found by optical beam induced resistance
change inspection. Errors smaller than 2% of the total length of
the line have been observed in the experiments. |
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Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
-Integrated circuits
-Metal oxide semiconductors, Complementary
-Circuits integrats
-Metall òxid semiconductors complementaris |
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Derechos:
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Tipo de documento:
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Artículo - Versión publicada
Artículo |
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