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Title:
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Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
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Author:
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Marsal Garví, Lluís F.; Martín García, Isidro; Pallarés Marzal, Josep; Orpella García, Alberto; Alcubilla González, Ramón
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
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Abstract:
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P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon
(c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal
annealing on the electrical transport properties of a-Si0.8C0.2 :H/c-Si diodes were investigated by
measuring their current–voltage characteristics. From the dark current–voltage characteristics
measured at different temperatures (298–373 K), transport mechanisms were analyzed in detail.
Two carrier transport mechanisms were found to be the origin of forward current. At low bias
voltage and temperatures above 320 K as-deposited diodes are dominated by recombination currents
on the amorphous side of the space charge region whereas annealed diodes are mainly dominated by
diffusion mechanisms. In contrast, at temperatures below 320 K, both types of diodes are mainly
dominated by multitunneling capture emission. At higher voltages, the current becomes space
charge limited for both diodes throughout the temperature range studied. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
-Silicon compounds
-Hydrogenation.
-Amorphous semiconductors.
-Amorphous silicon-carbon
-Amorphous semiconductors
-Annealing effects
-Carrier transport mechanism
-Conduction mechanisms
-Dark conductivity
-Dark current-voltage characteristics
-Electrical transport properties
-Elemental semiconductors
-Forward current
-Multitunneling capture emission
-p-n heterojunctions
-Recombination currents
-Semiconductor device measurement
-Semiconductor diodes
-Silicon compounds
-Space-charge-limited conduction
-Space charge limited current
-Temperature effects
-Wide band gap semiconductors
-Silici
-Hidrogen
-Semiconductors amorfs |
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Rights:
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Document type:
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Article |
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Published by:
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American Institute of Physics
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