A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H) deposition, without breaking the vacuum. We measured effective lifetime, Τ eff , through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. Seff values lower than 19 cm s -1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300°C.

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