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Title:
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Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences
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Author:
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Li, Binhong; Berbel Artal, Néstor; Boyer, A.; BenDhia, S.; Fernández García, Raúl
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
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Abstract:
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This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of failures in analog circuits. Measurements and simulations based on a simple model (Sakurai-Newton model) of fresh and stressed transistors are presented showing significant variations of EMI-induced DC shifts of drain current. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
-Semiconductors
-Metal oxide semiconductors
-Transistors
-Semiconductors
-Metall-òxid-semiconductors
-Transistors |
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Rights:
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Document type:
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Article - Submitted version
Conference Object |
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