Título:
|
Structure of 60° dislocations at the GaAs/Si interface
|
Autor/a:
|
Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Ruterana, Pierre; Loubradou, Marc; Bonnet, Roland
|
Otros autores:
|
Universitat de Barcelona |
Abstract:
|
High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations. |
Materia(s):
|
-Microscòpia electrònica -Feixos moleculars -Electron microscopy -Molecular beams |
Derechos:
|
(c) American Institute of Physics, 1996
|
Tipo de documento:
|
Artículo Artículo - Versión publicada |
Editor:
|
American Institute of Physics
|
Compartir:
|
|