Title:
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Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach
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Author:
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Bulashenko, Oleg; Gaubert, P.; Varani, L.; Vaissiere, J. C.; Nougier, J. P.
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Other authors:
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Universitat de Barcelona |
Abstract:
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A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained |
Subject(s):
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-Díodes -Soroll -Camps elèctrics -Semiconductors -Mètode de Montecarlo -Electrònica de l'estat sòlid -Microelectrònica -Diodes -Noise -Electric fields -Semiconductors -Monte Carlo method -Solid state electronics -Microelectronics |
Rights:
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(c) American Institute of Physics, 2000
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Document type:
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Article Article - Published version |
Published by:
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American Institute of Physics
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